| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to reduce resistance of a storage node and a bit line contact. CONSTITUTION: A gate oxide layer(32) is formed on a semiconductor substrate(31). A lower polysilicon layer is formed on the gate oxide layer(32). A trench is formed by etching selectively the lower polysilicon layer. An isolation layer(36) is formed by burying an insulating material into the trench. An ion implantation process and a channel ion implantation process are performed to form a well region after growing a sacrificial oxide layer on the lower polysilicon layer. A metal layer and a gate cap insulating layer(37) are formed on the lower polysilicon layer. A gate electrode(33) including the first and the second gate layers(33a,33b) is formed by performing a selective etching process. A gate sidewall(34) is formed at both sides of the gate electrode(33). An ESL(Elevated Silicon Layer)(35) with the same height as the first gate layer(33a) is formed on the exposed substrate(31).
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