发明名称 |
Method of cleaning a silicon, carbon, germanium, tin or lead surface |
摘要 |
<p>Metal impurities under the surface of a group IV element are removed to purify and flatten the surface. Such a method for purifying an Si, C, Ge, Sn or Pb surface having metal impurities under said surface comprises (I) hydrogenating the surface in the gas phase or liquid phase to thereby extracting the metal impurities onto the surface; and (II) removing the metal impurities.</p> |
申请公布号 |
EP1128419(A2) |
申请公布日期 |
2001.08.29 |
申请号 |
EP20010301740 |
申请日期 |
2001.02.26 |
申请人 |
JAPAN AS REPRESENTED BY DIRECTOR GENERAL OF MINISTRY OF EDUCATION, CULTURE, SPORTS, SCIENCE AND TECHNOLOGY N.R.I. FOR METALS |
发明人 |
HIGAI, SHINICHI;OONO, TAKAHISA |
分类号 |
H01L21/306;(IPC1-7):H01L21/306;C22B9/00 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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