发明名称 |
InAIGaN emitting light in ultraviolet short-wavelenght region and process for preparing the same as well as ultraviolet light-emitting device using the same |
摘要 |
<p>For the purpose of emitting light in an ultraviolet short-wavelength region having a wavelength of 360 nm or shorter, it is arranged in InAlGaN in such that a ratio of composition of In is 2% to 20%, a ratio of composition of Al is 10% to 90%, and a total of ratios of composition in In, Al, and Ga is 100%.</p> |
申请公布号 |
EP1128446(A2) |
申请公布日期 |
2001.08.29 |
申请号 |
EP20010301628 |
申请日期 |
2001.02.22 |
申请人 |
RIKEN |
发明人 |
HIRAYAMA, HIDEKI;AOYAGI, YOSHINOBU |
分类号 |
C23C16/34;C01G15/00;H01L33/06;H01L33/32;H01L33/34;(IPC1-7):H01L33/00 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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