METHOD FOR FORMING SILICON NITRIDE LAYER SPACER

摘要

PURPOSE: A method for forming a silicon nitride layer spacer is provided to improve an etching profile by adding O2 gas to an etching reaction gas. CONSTITUTION: An active region(210a) and an inactive region(210b) are defined on a semiconductor substrate(200). A gate pattern(212) is formed on the semiconductor substrate(200). A low density dopant region(214) is formed within the active region(210a) of both sides of the gate pattern(212). A silicon nitride layer is formed on the whole structure. A photoresist layer is applied on the whole structure. The photoresist layer is patterned to expose only a core/peripheral region(B). A cell region(A) is covered by a photoresist pattern. The silicon nitride layer is etched by using the photoresist pattern as a mask and a nitride layer pattern(216a) and a gate spacer(216b) are formed thereby. The photoresist pattern is removed. A high density dopant region is formed within the active region(210a).