RESIST PATTERN FORMING METHOD, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND APPARATUS FOR REMOVING ORGANIC ANTIREFLECTION FILM

摘要

PURPOSE: To provide a so improved resist pattern forming method as to enhance the dimensional accuracy of a resist pattern. CONSTITUTION: An organic antireflection film 503 is formed on a semiconductor substrate 501. A resist 504 is formed on the substrate 501 by way of the antireflection film 503. The resist 504 is patterned to form a resist pattern 508 having an opening. Part of the antireflection film 503 disclosed at the bottom of the opening of the resist pattern 508 is removed with atomic oxygen.