发明名称 |
Modulated power for ionized metal plasma deposition |
摘要 |
<p>In a plasma deposition system for depositing a film of sputtered target material on a substrate, the output of an RF generator coupled to a coil for generating a plasma can be varied during the deposition process so that heating and sputtering of the RF coil can be more uniform by "time-averaging" RF voltage distributions along the RF coil. In another embodiment, RF energy applied to a coil positioned to sputter material onto a workpiece, is modulated to control the biasing of the coil. As a consequence, control of coil sputtering may be improved such that the uniformity of deposition may also be improved.</p> |
申请公布号 |
EP1128414(A1) |
申请公布日期 |
2001.08.29 |
申请号 |
EP20010201242 |
申请日期 |
1998.08.06 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
GOPALRAJA, PRABURAM.;FORSTER, JOHN.C.;STIMSON, BARDLEY.O. |
分类号 |
H01J27/16;C23C14/34;C23C14/35;C23C14/40;H01J37/08;H01J37/32;H01J37/34;H01L21/203;(IPC1-7):H01J37/34 |
主分类号 |
H01J27/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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