| 摘要 |
A working method is provided wherein, when etching is performed for an object having crystal such as crystal, the etching is performed so that such a defect as an etch channel or an etch pit may not appear. In an etching method wherein crystal 40 is soaked in ammonium hydrogen fluoride solution in an etching solution 10, a solution temperature controller 20 controls the temperature of the solution in the etching vessel 10 so that the etching speed is higher than the crystal growth speed of the crystal 40. <IMAGE> |
