PREPROCESSING CLEANING METHOD TO INCREASE DEPOSITION SPEED OF COPPER THIN FILM FOR WIRING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A preprocessing cleaning method to increase deposition speed of a copper thin film is to form a stable copper layer without a nitride annealing process, thereby preventing increase in specific resistance of copper wiring due to generation of an intermetallic compound. CONSTITUTION: A lower film(2) is formed on a substrate(1) by a sputtering method. A palladium layer(3) is also formed on the lower film by the sputtering method. A copper layer(4) is formed on the palladium layer by a chemical vapor deposition method. In the step of forming the lower film, the sputtering method is performed at a radio-frequency power of 1 to 4kw at a temperature of 0 to 100 deg.C. In the step of forming the palladium layer, the sputtering method is performed at a radio-frequency power of 2 to 5kw at a temperature of 300 to 400 deg.C. In the step of forming the copper layer, a temperature of the substrate is 130 to 270 deg.C, when performing the chemical vapor deposition method.