发明名称 |
Technique to obtain increased channel mobilities in NMOS transistors by gate electrode engineering |
摘要 |
A method of modifying the mobility of a transistor. First, a transistor having a gate is formed. A substance is then implanted in the gate. The transistor is annealed such that the implanted substance forms at least one void in the transistor's gate.
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申请公布号 |
US6281532(B1) |
申请公布日期 |
2001.08.28 |
申请号 |
US19990340954 |
申请日期 |
1999.06.28 |
申请人 |
INTEL CORPORATION |
发明人 |
DOYLE BRIAN S.;ROBERDS BRIAN;LEE JIN |
分类号 |
H01L21/265;H01L21/28;H01L29/06;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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