发明名称 |
Method for synthesizing single crystal AIN thin films of low resistivity n-type and low resistivity p-type |
摘要 |
In growing single AlN thin films on a semiconductor substrate by rapidly cooling a beam of atomic Al and atomic or molecular N obtained by exciting or decomposing N2 with an electromagnetic wave on the semiconductor substrate, an n-type dopant and a p-type dopant in the form of atomic beams are simultaneously doped in a crystal, so that pairs of an n-type dopant and a p-type dopant are formed in the crystal to synthesize single crystal AlN thin films of low resistivity n-type and low resistivity p-type.
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申请公布号 |
US6281099(B1) |
申请公布日期 |
2001.08.28 |
申请号 |
US20000486946 |
申请日期 |
2000.03.06 |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY CORPORATION |
发明人 |
YOSHIDA HIROSHI |
分类号 |
C30B29/38;C30B23/02;C30B31/20;H01L21/203;H01L21/205;H01L21/263;(IPC1-7):H01L21/20 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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