| 摘要 |
A photovoltaic generator comprising a substrate; an insulating layer provided on the substrate; first impurity diffusion zones formed on the insulating layer; second impurity diffusion zones deep enough to reach the insulating layer and of an opposite polarity to that of the first impurity diffusion zones the second impurity diffusion zones and the first impurity diffusion zones being alternately positioned on the surface of the substrate to form substantially vertical pn junctions; third impurity diffusion zones provided on the surface of the first impurity diffusion zones and the second impurity diffusion zones opposite to the insulating layer and of the same polarity as that of the second impurity diffusion zones, one end of each of the third impurity diffusion zones connecting, to the adjacent one of the second impurity diffusion zones while the other end connecting to the adjacent one of the first impurity diffusion zones; fourth impurity diffusion zones formed on the surface of the adjacent one of the first impurity diffusion zones and the adjacent one of the second impurity diffusion zones opposite to the insulating layer and being a heavily doped impurity diffusion zones of the same polarity as that of the first impurity diffusion zones; thin-film electrodes each connecting the adjacent one of the fourth impurity diffusion zones and the adjacent one of the second impurity diffusion zones and/or the adjacent one of the third impurity diffusion zones, and isolation zones each provided between the plurality of thin-film electrodes.
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