| 摘要 |
PROBLEM TO BE SOLVED: To improve an antistatic action by surely leaving a protecting layer 9 of a part corresponding to a heating part 3a of a heating resistor 3 and removing the other part when etching the protecting layer 9. SOLUTION: The heating resistor 3 with the heating part 3a is formed on a substrate 1. Electrodes 4 and 5 to be connected to the heating resistor 3 are formed. The protecting layer 9 for covering the heating resistor 3 and the electrodes 4, 5 is formed. A metallic layer 31 is formed on the protecting layer 9. The metallic layer 31 is removed while at least a part covering the heating part 3a of the heating resistor 3 is left. The protecting layer 9 is removed by etching with the part covered with the metallic layer 31 being left. A conductive layer 32 composed of a thermit layer essentially consisting of a metallic element, silicon and oxygen is formed on the metallic layer 31. When the protecting layer 9 is etched, the protecting layer 9 which covers at least the heating part 3a of the heating resistor 3 with the metallic layer 31 can be surely left and the other part can be surely removed. The antistatic effect is obtained by the metallic layer 31 remaining after the protecting layer 9 is etched together with the conductive layer 32.
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