发明名称 |
Damascene metal interconnects using highly directional deposition of barrier and/or seed layers including (III) filling metal |
摘要 |
An improved damascene metal interconnect for use in a semiconductor integrated circuit. By using highly directional deposition of barrier and/or seed layers the texture of the damascene structure is improved. A first barrier metal layer is deposited in a standard deposition manner, and a second barrier metal is then applied in a highly directional manner. For example, tungsten, titanium and tantalum nitrides can be used as barrier metals. Copper or aluminum based metal is deposited over the second barrier metal, and is then polished by using a chemical mechanical polish. A passivation layer can then be deposited over the interconnect.
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申请公布号 |
US6281121(B1) |
申请公布日期 |
2001.08.28 |
申请号 |
US19980036127 |
申请日期 |
1998.03.06 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
BROWN DIRK DEWAR;NOGAMI TAKESHI;MORALES GUARIONEX |
分类号 |
H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/768 |
代理机构 |
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地址 |
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