发明名称 Target misalignment detector
摘要 A method and apparatus for detecting target misalignment and plasma instability in a sputtering chamber in a semiconductor fabrication system is provided. In certain embodiments, a detector is utilized to monitor the voltage of the power applied to bias the target. If the voltage fluctuates excessively, plasma instability and target misalignment is indicated.
申请公布号 US6280579(B1) 申请公布日期 2001.08.28
申请号 US19980123507 申请日期 1998.07.28
申请人 APPLIED MATERIALS, INC. 发明人 LEE SEH KWANG;EGERMEIER JOHN
分类号 C23C14/34;C23C14/56;H01J37/34;(IPC1-7):C23C14/34 主分类号 C23C14/34
代理机构 代理人
主权项
地址