发明名称 Memory devices and memory reading methods
摘要 Comparators, memory devices, comparison methods and memory reading methods are provided. One aspect provides a comparator including an input stage having a data input adapted to receive a data voltage signal, a reference input adapted to receive a reference voltage signal, and a plurality of current sources individually coupled with one of the data input and the reference input and individually configured to convert one of the data voltage signal and the reference voltage signal to a differential current signal and to output the differential current signal; and a comparator stage including a plurality of inputs configured to receive the differential current signals from the input stage and the comparator stage being configured to compare the differential current signals and to output an output signal indicative of a comparison of the differential current signals.
申请公布号 US6282129(B1) 申请公布日期 2001.08.28
申请号 US20000519940 申请日期 2000.03.07
申请人 VLSI TECHNOLOGY, INC. 发明人 KHOURY ELIE GEORGES;ULMER RICHARD W.
分类号 G11C17/18;G11C7/06;G11C7/10;H03F3/45;H03K5/08;(IPC1-7):G11C7/00 主分类号 G11C17/18
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