| 发明名称 |
SOI MOSFET body contact and method of fabrication |
| 摘要 |
A body contact to a SOI device is created by providing a deeper buried oxide region for providing connection to the FET body.
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| 申请公布号 |
US6281593(B1) |
申请公布日期 |
2001.08.28 |
| 申请号 |
US19990455554 |
申请日期 |
1999.12.06 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BROWN JEFFREY SCOTT;BRYANT ANDRES;GAUTHIER, JR. ROBERT J.;VOLDMAN STEVEN HOWARD |
| 分类号 |
H01L21/265;H01L21/266;H01L21/762;H01L29/786;(IPC1-7):H01L27/088 |
主分类号 |
H01L21/265 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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