发明名称 |
Flash memory device with program status detection circuitry and the method thereof |
摘要 |
A nonvolatile semiconductor memory device includes a program state detection circuit for checking a state of programmed memory cells. The program state detection circuit checks program pass/fail using data transmitted through a column selection circuit, according to a column address having redundancy information. Therefore, it is possible to overcome the problem that the memory device is regarded as a fail device owing to a defective column.
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申请公布号 |
US6282121(B1) |
申请公布日期 |
2001.08.28 |
申请号 |
US20000656321 |
申请日期 |
2000.09.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO TAE-HEE;KWON SEOK-CHEON |
分类号 |
G01R31/28;G11C16/02;G11C16/06;G11C16/34;G11C29/04;(IPC1-7):G11C7/00 |
主分类号 |
G01R31/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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