| 发明名称 |
Back-plane for semiconductor device |
| 摘要 |
A back-plane for a semiconductor device, includes an oxidized substrate, a metal film formed on the oxidized substrate forming a back-gate, a back-gate oxide formed on the back-gate, and a silicon layer formed on the back-gate oxide.
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| 申请公布号 |
US6281551(B1) |
申请公布日期 |
2001.08.28 |
| 申请号 |
US19990369928 |
申请日期 |
1999.08.09 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHAN KEVIN KOK;D'EMIC CHRISTOPHER PETER;JONES ERIN CATHERINE;SOLOMON PAUL MICHAEL;TIWARI SANDIP |
| 分类号 |
H01L21/762;(IPC1-7):H01L27/01;H01L27/12;H01L29/76;H01L29/94;H01L31/039 |
主分类号 |
H01L21/762 |
| 代理机构 |
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