| 摘要 |
A pressure-contact semiconductor device comprises a first main electrode plate, a second main electrode plate facing the first main electrode plate, an insulating enclosure for holding the periphery of each of the first and second main electrode plates in such a manner that the first and second main electrode plates face each other, a gate terminal provided so as to penetrate the enclosure, a gate electrode plate which is insulatively provided on the main surface of the first main electrode facing the second main electrode and which is electrically connected to the gate terminal, pressure-contact pins which are insulatively provided on the main surface of the first main electrode and which are electrically connected to the gate electrode plate, and semiconductor chips which are arranged in such a manner that the chips are sandwiched and pressed by the first and second main electrode plates and which each have a first and a second main electrode in pressure-contact with the first and second main electrode plates, respectively, and a gate electrode with which the corresponding one of the pressure-contact pins comes into pressure-contact.
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