发明名称 Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor compounds
摘要 In one aspect, a deposition method comprises the following steps: a) forming a layer on a semiconductive substrate, the layer comprising predominately an inorganic material, the layer also comprising incorporated carbon; b) generating a plasma adjacent the layer from a component gas, the component gas consisting essentially of N2; and c) utilizing the plasma to remove the carbon from the layer.
申请公布号 US6281123(B1) 申请公布日期 2001.08.28
申请号 US20000545977 申请日期 2000.04.10
申请人 MICRON TECHNOLOGY, INC. 发明人 SANDHU GURTEJ S.
分类号 B05D3/06;C23C14/02;C23C16/44;C23C16/455;C23C16/56;H01L21/285;H01L21/31;H01L21/44;H01L21/70;H01L51/40;H05H1/00;(IPC1-7):H01L21/44 主分类号 B05D3/06
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