发明名称 |
Quartz glass crucible for pulling silicon single crystal and production process for such crucible |
摘要 |
There is provided a quartz glass crucible for pulling a silicon single crystal and a production process for the crucible, wherein an inner surface of the crucible is crystallized without addition of impurities during pulling a silicon single crystal, thereby impurities serving as causes of crystal defects being not incorporated into the silicon single crystal, so that deterioration of its inner surface is suppressed to improve a crystallization ratio, and accordingly productivity of the quartz glass crucible as well as a quality of the silicon single crystal is improved, and the quartz glass crucible for pulling a silicon single crystal comprises a crucible base body (3) made of a translucent quartz glass layer and a synthetic quartz glass layer (4) formed on an inner wall surface of the crucible base body (3), wherein a portion encircled by a brown ring on an inner surface of the quartz glass crucible is uniformly crystallized during pulling the silicon single crystal.
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申请公布号 |
US6280522(B1) |
申请公布日期 |
2001.08.28 |
申请号 |
US20000508695 |
申请日期 |
2000.03.29 |
申请人 |
SHIN-ETSU QUARTZ PRODUCTS CO. LTD.;SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
WATANABE HIROYUKI;MIYAZAWA HIROYUKI;SATO TATSUHIRO;SOETA SATOSHI;IGARASHI TETSUYA |
分类号 |
C03B19/09;C30B15/10;C30B35/00;(IPC1-7):C30B13/22 |
主分类号 |
C03B19/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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