发明名称 Quartz glass crucible for pulling silicon single crystal and production process for such crucible
摘要 There is provided a quartz glass crucible for pulling a silicon single crystal and a production process for the crucible, wherein an inner surface of the crucible is crystallized without addition of impurities during pulling a silicon single crystal, thereby impurities serving as causes of crystal defects being not incorporated into the silicon single crystal, so that deterioration of its inner surface is suppressed to improve a crystallization ratio, and accordingly productivity of the quartz glass crucible as well as a quality of the silicon single crystal is improved, and the quartz glass crucible for pulling a silicon single crystal comprises a crucible base body (3) made of a translucent quartz glass layer and a synthetic quartz glass layer (4) formed on an inner wall surface of the crucible base body (3), wherein a portion encircled by a brown ring on an inner surface of the quartz glass crucible is uniformly crystallized during pulling the silicon single crystal.
申请公布号 US6280522(B1) 申请公布日期 2001.08.28
申请号 US20000508695 申请日期 2000.03.29
申请人 SHIN-ETSU QUARTZ PRODUCTS CO. LTD.;SHIN-ETSU HANDOTAI CO., LTD. 发明人 WATANABE HIROYUKI;MIYAZAWA HIROYUKI;SATO TATSUHIRO;SOETA SATOSHI;IGARASHI TETSUYA
分类号 C03B19/09;C30B15/10;C30B35/00;(IPC1-7):C30B13/22 主分类号 C03B19/09
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