Method for manufacturing nonvolatile memory device capable of preventing damage to side walls of stacked gate and active region

摘要

A method for manufacturing a nonvolatile memory device is provided. After forming an etching damage prevention layer on the entire surface of a stacked gate structure and on the entire surface of a semiconductor substrate, a self-aligned source etching process is performed. Thus, damage to side walls of the stacked gate structure and an active region can be prevented during the self-aligned source etching process.