发明名称 Semiconductor device having optimized input/output cells
摘要 A semiconductor device includes cell areas laid out along a periphery of the device. A plurality of transistors are formed in each cell area, and are separated into at least three transistor groups arranged in a direction perpendicular to a circumferential direction of the semiconductor device. Each transistor group is connected to a high-potential power supply or a low-potential power supply. The semiconductor device has at least one interconnection line common to both the transistor group connected to the high-potential power supply and the transistor group connected to the low-potential power supply. The interconnection line serves to connect those transistor groups to external pads.
申请公布号 US6281529(B1) 申请公布日期 2001.08.28
申请号 US19960679566 申请日期 1996.07.15
申请人 FUJITSU LIMITED 发明人 WATANABE MASATOSHI
分类号 H01L21/302;H01L21/3065;H01L21/82;H01L21/822;H01L21/8238;H01L27/02;H01L27/04;H01L27/088;H01L27/092;(IPC1-7):H01L27/10 主分类号 H01L21/302
代理机构 代理人
主权项
地址