发明名称 |
Low imprint ferroelectric material for long retention memory and method of making the same |
摘要 |
A liquid precursor for forming a thin film of ferroelectric metal oxide in an integrated circuit contains metal oxides in excess of the stoichiometrically balanced amount. When the precursor comprises strontium, bismuth, tantalum and niobium for forming strontium bismuth tantalum niobate, the precursor contains excess amounts of at least one of tantalum and niobium. Capacitors containing thin films of layered superlattice material made from a precursor containing excess tantalum and niobium show good polarizability and low percentage imprint after 1010 negative polarization switching pulses at 75° C., and after 109 negative polarization switching pulses at 125° C.
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申请公布号 |
US6281534(B1) |
申请公布日期 |
2001.08.28 |
申请号 |
US19980170417 |
申请日期 |
1998.10.13 |
申请人 |
SYMETRIX CORPORATION;MATSUSHITA ELECTRONICS CORPORATION |
发明人 |
ARITA KOJI;HAYASHI SHINICHIRO;CUCHIARO JOSEPH D.;PAZ DE ARAUJO CARLOS A. |
分类号 |
H01B3/12;H01L21/314;H01L21/316;H01L21/8242;H01L21/8246;H01L27/105;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01B3/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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