发明名称 SEMICONDUCTOR PACKAGE AND SOLDER JOINING
摘要 PROBLEM TO BE SOLVED: To suppress the generation of a joining defect of a solder alloy and a solder-joined structure to improve the joining strength. SOLUTION: For a joined structure where a first solder alloy consisting essentially of Sn and contains at least one of Ag and Cu in Sn and a second solder alloy containing both Sn and Cu are melt-joined to form a joining alloy, the composition of each solder alloy is so set as to satisfy the following relation (1): (W1+W2)<=0.6×W3... (1), where the case where W1=0 or W2=0 is included, and W1: the content of Ag with respect to the whole joining alloy, W2: the content of Cu with respect to the whole joining alloy, and W3: the content of Zn with respect to the whole joining alloy.
申请公布号 JP2001232491(A) 申请公布日期 2001.08.28
申请号 JP20000042059 申请日期 2000.02.18
申请人 FUJITSU LTD 发明人 AKAMATSU TOSHIYA;YAMAGISHI YASUO
分类号 B23K35/26;B23K35/22;C22C13/00;C22C13/02;H05K3/34;(IPC1-7):B23K35/26 主分类号 B23K35/26
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