发明名称 |
Method to reduce trench cone formation in the fabrication of shallow trench isolations |
摘要 |
A new method of fabricating shallow trench isolations has been achieved. A silicon dioxide layer is formed overlying a semiconductor substrate. A silicon nitride layer is deposited overlying the silicon dioxide layer. The silicon nitride layer is patterned to expose the semiconductor substrate where shallow trench isolations are planned. Ions are implanted into the exposed semiconductor substrate. The implanting damages any passive surface materials overlying the semiconductor substrate. The exposed semiconductor substrate is etched down to form trenches. The damaged passive surface materials are removed during the etching down to thereby prevent trench cone formation. A trench filling layer is deposited to fill the trenches. The trench filling layer is polished down to complete the shallow trench isolations in the manufacture of the integrated circuit device.
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申请公布号 |
US6281093(B1) |
申请公布日期 |
2001.08.28 |
申请号 |
US20000619016 |
申请日期 |
2000.07.19 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
PRADEEP YELEHANKA RAMACHANDRAMURTHY;ZHONG QINGHUA;ZOU ZHENG;GERUNG HENRY |
分类号 |
H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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地址 |
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