发明名称 |
Post-development resist hardening by vapor silylation |
摘要 |
A method of improving the etch resistance of a patterned imageable resist prior to patterning an underlying substrate layer is provided. Specifically, the method employed by the present invention comprises applying a layer of an imageable resist to a substrate layer; patterning the layer of imageable resist by removing selective areas thereof; and treating the patterned imageable resist with an atmosphere comprising molecules of a hardening agent so as to obtain a hardened resist surface which etches at a slower rate than that of the untreated resist.
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申请公布号 |
US6280908(B1) |
申请公布日期 |
2001.08.28 |
申请号 |
US19990292727 |
申请日期 |
1999.04.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
AVIRAM ARI;ROOKS MICHAEL JOSEPH |
分类号 |
G03F7/40;(IPC1-7):G03F7/26 |
主分类号 |
G03F7/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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