| 摘要 |
There is disclosed a method of manufacturing a semiconductor device capable of solving the problems that a conventional method could not secure a sufficient beam current upon ion injection when forming a junction region at shallow thickness as the integration level of'devices becomes higher, and also it causes a short channel effect etc.The method includes forming a junction region, forming a selective epitaxial growth layer and then forming a LDD region, using a facet phenomenon occurring at the edge portion of the gate electrode when forming an elevated junction structure by use of a selective epitaxial growth method. Thus, it can obtain a junction region having a very shallow depth, accomplish a higher integration level of devices and prohibit a short channel effect.
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