| 发明名称 |
Injection seeded F<sub>2</sub> lithography laser |
| 摘要 |
A tunable injection seeded very narrow band F2 lithography laser. The laser combines modular design features of prior art long life releasable lithography lasers with special F2 line narrowing and tuning techniques applied to a seed beam operated in a first gain medium which beam is used to stimulate narrow band lasing in a second gain medium to produce a very narrow band laser beam useful for integrated circuit lithography. |
| 申请公布号 |
AU3634901(A) |
申请公布日期 |
2001.08.27 |
| 申请号 |
AU20010036349 |
申请日期 |
2000.11.28 |
| 申请人 |
CYMER, INC. |
发明人 |
ECKEHARD D. ONKELS;PALASH P DAS;THOMAS P. DUFFEY;RICHARD L SANDSTROM;ALEXANDER I. ERSHOV;WILLIAM N PARTLO |
| 分类号 |
G03F7/20;H01L21/027;H01S3/036;H01S3/038;H01S3/097;H01S3/134;H01S3/225;H01S3/23 |
主分类号 |
G03F7/20 |
| 代理机构 |
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代理人 |
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