发明名称
摘要 PURPOSE:To form a fine ring-shaped storage node without remarkably increasing the steps by exposing by using an exposure reticle with a shifter, and forming a storage node forming fine pattern with a pattern corresponding to a boundary between a transmitted light phase inverted part and the other part. CONSTITUTION:When a resist film 14 for forming a storage node is pattern- processed, an exposure reticle 40 with a shifter is used. A transmitted light phase inverted part 42 is formed in a predetermined pattern on the reticle 40. Accordingly, when the reticle 40 is used, an exposure light passed through the part 42 is inverted with respect to the phase of the light passed through the other part, and hence a part to become a shade of a light is generated due to an interference of the light on the boundary part, and a fine pattern is formed. Thus, a resist film 14 can be pattern-processed in a ring state.
申请公布号 JP3203776(B2) 申请公布日期 2001.08.27
申请号 JP19920180476 申请日期 1992.06.15
申请人 发明人
分类号 G03F7/20;H01L21/027;H01L21/822;H01L21/8242;H01L27/04;H01L27/10;H01L27/108 主分类号 G03F7/20
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