发明名称
摘要 PURPOSE:To enhance the reliability upon wiring by a method wherein a fine trench is formed to highly integrate an element while forming a rear surface wiring to reduce the step difference caused by the multilayer wiring structure. CONSTITUTION:A first trench 12 is formed on the first substrate 11 to form a trench formation film 13 on the inner wall of the trench; next, after the formation of an insulator buried part 15 inside the trench 12, the second substrate 19 is sticked on the whole surface in the formed trench 12 side through the intermediary of a flattening layer 18 and then the first substrate 11 is removed until the trench formation film 13 is exposed, next, the film 13 is removed to form a second trench 20. Furthermore, the trench formation film 13 is used as the first wiring to form the rear wiring comprising the first wiring and the second wiring connected thereto on the first substrate 1 through the intermediary of an insulating film finally after sticking the second substrate 19 in the same procedures, the first substrate 11 is removed.
申请公布号 JP3203720(B2) 申请公布日期 2001.08.27
申请号 JP19910352505 申请日期 1991.12.13
申请人 发明人
分类号 H01L21/302;H01L21/3065;H01L21/768;H01L21/822;H01L21/8242;H01L27/04;H01L27/10;H01L27/108 主分类号 H01L21/302
代理机构 代理人
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