| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain an E<2> PROM in which a data can be written in and read out at a sufficiently high rate even when the scale is enlarged by using a first memory part as a memory region for storing the content of file and a second memory part as a memory region for storing file information. SOLUTION: The E<2> PROM comprises a first E<2> PROM array 19 for recording first type of information comprising NAND cells, and a second E<2> PROM array 27 for recording second type of information comprising conventional memory cells integrated on one substrate. A sense amplifier 20, a row decoder 21, a row address butter 22, a column decoder 23, and the like, are arranged around the first array 19 and a shift register 24 for temporarily storing an I/O data is also provided. A sense amplifier 28, a row decoder 29, a column address butter 31, and the like, are arranged around the second array 27.</p> |
