| 摘要 |
<p>PROBLEM TO BE SOLVED: To increase a product life by improving the reliability of an active matrix type liquid crystal display. SOLUTION: The method for manufacturing the gate insulation film of a thin-film transistor for driving pixels or peripheral circuit consists of the alternately repetition of the formation of the insulation film and the succeeding surface treatment of the insulation film by an oxidizing gas. As a result, the impurity of the gate insulation film of the thin-film transistor for driving the pixels or peripheral circuit improves and the gate insulation film becomes dense, thus improving the reliability of the thin-film transistor and hence improving the reliability of the liquid crystal display and increasing a product life.</p> |
