MAGNETIC TUNNEL JUNCTION ELEMENT AND MAGNETIC MEMORY USING THE SAME

摘要

PROBLEM TO BE SOLVED: To eliminate a defect that in the conventional laminated magnetic tunnel junction(MTJ) element with a high sensitivity, an influence of a demagnetizing filed caused by magnetic poles on both ends of the element becomes larger with the shrinkage of the element since a ferromagnetic layer which will serve as a memory layer is laterally magnetized, eventually causing unstabilized magnetization of the memory layer. SOLUTION: A closed magnetic path layer 15 is formed on the ferromagnetic layer 14 which will serve as the memory layer of the laminated MTJ element 1. The ferromagnetic layer which will serve as the memory layer is constituted of a closed magnetic path.