发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To achieve RT structure using a raw water for reducing costs and at the same time suppressing consumption power. SOLUTION: An n+ buffer layer that is formed on the reverse side of an N- layer 11 consists of an inactive region 21 where the activation of ions is incomplete, and an active region 19 that is a region where the activation of ions has been improved. The carrier concentration of the active region 19 is higher than that of ht inactive region 21. Also, in the inactive region 21, an electrical activation rate X or injected ions is 1%<=X<=30%.
申请公布号 JP2001230415(A) 申请公布日期 2001.08.24
申请号 JP20000038469 申请日期 2000.02.16
申请人 TOSHIBA CORP 发明人 NOZAKI HIDEKI;BABA YOSHIAKI;KOBAYASHI MOTOOMI
分类号 H01L29/78;H01L29/08;H01L29/739 主分类号 H01L29/78
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