发明名称 METHOD AND EQUIPMENT FOR FORMING WIRING BY SPUTTERING, AND TARGET MATERIAL USED THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide equipment for forming wiring by sputtering which can make such coating or embedding that no deficit nor cavity is generated in fine recesses formed on the surface of a base material by sputtered atoms entering into the deepest portions of the recesses, by improving the obliquely advancing tendency of the sputtered atoms. SOLUTION: This equipment for forming wiring by sputtering is provided with a chamber 1, a base material 2 and a target 4 arranged in the chamber 1 to face each other, a DC power source 10, and a sputtering gas source 7. Ionized and accelerated high-energy particles in the base material 2 are brought into collision with the target 4 by supplying a high voltage across the material 2 and target 4 from the power source 10, and, at the same time, introducing a sputtering gas into the chamber 1 from the gas source 7. Fine recesses preformed on the surface of the material 2 are coated or filled up by causing the high-energy particles flying out of the target 4 to deposit on the material 2. A conductive material having a crystal grain size of <=60μm is used as the target 4.
申请公布号 JP2001230218(A) 申请公布日期 2001.08.24
申请号 JP20000039661 申请日期 2000.02.17
申请人 EBARA CORP 发明人 KOGURE NAOAKI;KATO TAKAO;HORIE KUNIAKI
分类号 H01L21/3205;C23C14/34;H01L21/203;H01L21/28;H01L21/285;(IPC1-7):H01L21/285;H01L21/320 主分类号 H01L21/3205
代理机构 代理人
主权项
地址