发明名称 SYNCHRONIZATION TYPE SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To substantially suppress the increase of power consumption in a standby state even in the case of accelerating a system clock. SOLUTION: Based on system clock signals CLK composed of a series of pulse strings and a clock activation signals CKE, an internal clock activation signal generation circuit 10 generates internal clock activation signals cke-c and latch signals cke1. An internal clock signal generation circuit 20 generates internal clock signals clk-in based on the internal clock activation signals cke-c and the system clock CLK. A CKE latch clock control signal generation circuit 30 generates CKE latch clock control signals cke-x for controlling the activation and inactivation of CKE latch clock signals based on the internal clock activation signals cke-c, the latch signals cke1, the system clock signals CLK and the clock activation signals CKE.
申请公布号 JP2001229673(A) 申请公布日期 2001.08.24
申请号 JP20000038880 申请日期 2000.02.16
申请人 SHARP CORP 发明人 YOSHIMOTO TAKAHIKO
分类号 G11C11/407;G11C7/10;G11C7/22;G11C11/4076;(IPC1-7):G11C11/407 主分类号 G11C11/407
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