| 摘要 |
PROBLEM TO BE SOLVED: To estimate a multi-dimensional impurity distribution or shape with high accuracy in a region of a depletion layer or an insulating layer between spaces of multi-electrodes with respect to an estimation method of a semiconductor device. SOLUTION: While a first voltage is applied to a third electrode 31 out of a first electrode 31, a second electrode 32, and the third electrode 33, a first electrostatic capacity between the first electrode 31 and the second electrode 32 is calculated. While a second voltage is applied to the third electrode 31, a second electrostatic capacity between the first electrode 31 and the second electrode 32 is calculated. The impurity distribution or the impurity regional shape is estimated on the basis of a finite difference or a differential amount between the first and second electrostatic capacities.
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