发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To raise the current amplification factor of a bipolar transistor. SOLUTION: The semiconductor integrated circuit device has bipolar transistors each comprising a second conductivity type first semiconductor region formed on a main surface of a first conductivity type semiconductor substrate, a base region composed of a second conductivity type first semiconductor region formed in the first semiconductor region, an emitter region composed of a second conductivity type third semiconductor region formed in the second semiconductor region, and a collector region composed of a second conductivity type fourth semiconductor region formed in the second semiconductor region so as to be opposite to the third semiconductor region, and the first semiconductor region is electrically connected to the fourth semiconductor region.
申请公布号 JP2001230333(A) 申请公布日期 2001.08.24
申请号 JP20000036028 申请日期 2000.02.15
申请人 HITACHI LTD;HITACHI INFORMATION TECHNOLOGY CO LTD 发明人 SEKINE YASUSHI;TERAKAWA HIROAKI
分类号 H01L29/73;H01L21/331;H01L21/8249;H01L27/06;(IPC1-7):H01L21/824 主分类号 H01L29/73
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