| 摘要 |
PROBLEM TO BE SOLVED: To provide a mini-chip type surge absorbing element separating an arc discharging area from a gap element. SOLUTION: A rectangular protrusion is formed on both surface of a conductive silicon chip, and an oxide film is formed on the surface of the rectangular protrusion and the gap element is formed by forming a glass layer by removing the oxide film only the upper surface of the rectangular protrusion. The gap element has a shape as if it covers the upper and lower surface of a hat with flange. The height of the hat (rectangular protrusion and glass layer) corresponds to the micro-gap. The adhesion of sputtered charged particle to the gap element is prevented because the flange (difference in level) of the gap element separates the arc discharging area from the gap element. High dielectric strength of the glass layer improves the reliability of the surge absorbing element.
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