发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To surely test a bare chip stably in screening. SOLUTION: A contact pin 2b is formed on the bottom face of an open-top socket 2 mounted on a burn-in board 1 so as to be connected to an electrode of the burn-in board 1. An interposer 3c for mounting the bare chip CH is arranged in a lower base 3a of an IC socket 3. The interposer 3c is constructed of a multiplayered buildup base board laminated by repeatedly forming an insulation layer and a conductor wiring layer made of a buildup material. The bare chip CH is mounted while an upper base 3a, the bare chip CH and the lower base 3b are heated at a glass transition temperature approximately. In this way, the interposer 3c is softened, and an electrode D of the interposer 3c is connected to a bump BP of the bare chip CH while sinking downward, so that a contact characteristic can be maintained.
申请公布号 JP2001228200(A) 申请公布日期 2001.08.24
申请号 JP20000035296 申请日期 2000.02.14
申请人 HITACHI LTD;HITACHI HOKKAI SEMICONDUCTOR LTD 发明人 SUMI YOSHIYUKI;SASAKI HIDEYUKI;FUNAKI TSUKIO;KIKUCHI HIROSHI
分类号 G01R31/26;G01R1/073;H01L21/66;(IPC1-7):G01R31/26 主分类号 G01R31/26
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