发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method by which the flatness of a semiconductor substrate is hard to be deteriorated and no particle is produced when a hard mark is formed on the semiconductor substrate. SOLUTION: In a semiconductor device wherein an alphanumeric identification symbol is indicated on the surface of a semiconductor substrate 3 by using a dot 1, the dot 1 is formed by laser beam processing. To remove a projecting part caused by the melted substrate material during the formation of the dot 1, a counter-sunk part 5 (chamfered part) is formed around the periphery of the opening of the dot 1.
申请公布号 JP2001230165(A) 申请公布日期 2001.08.24
申请号 JP20000075849 申请日期 2000.03.17
申请人 TOSHIBA CORP 发明人 MATSUURA KENJI
分类号 H01L21/302;H01L21/02;H01L21/306;(IPC1-7):H01L21/02 主分类号 H01L21/302
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