| 摘要 |
PROBLEM TO BE SOLVED: To offer a NAND-type of non-volatile semiconductor memory device which is rewritable page by page without a probability of an error writing. SOLUTION: The non-volatile semiconductor memory device of this invention is provide with a means for wiring with a usual tunnel current after predetermining a control gate voltage of a memory cell in a selected block to be 0 V and performing the operation of discharging channel electrons wherein a predetermined voltage which is lower than a delete voltage is applied to a P-well in which a NAND-type memory cell is formed. Thus, a value of the intermediate voltage to prevent an error writing into a selective memory cell can be predetermined to be at a low value which is the same as a reading voltage. As a result, the NAND-type of non-volatile semiconductor memory device which is rewritable page by page can be offered. |
