| 摘要 |
<p>PROBLEM TO BE SOLVED: To eliminate a defect that in the conventional magnetic tunnel junction(MTJ) element, magnetic poles are generated on both ends since a ferromagnetic layer which will become a memory layer is laterally magnetized and an influence of a demagnetizing field caused by the magnetic poles on both ends becomes larger with the shrinkage of the element which is required for a high density of a magnetic memory, resulting in causing unstabilized magnetization of the memory layer. SOLUTION: On the ferromagnetic layer 14 which will becomes the memory layer of the MTJ element 1, a closed magnetic path layer 17 is formed through metal layers 15, 16 and with a central part being separated from the ferromagnetic layer 14.</p> |
