| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor chip ceramic which can be prevented from deteriorating in PTC characteristics and improved in manufacturability and a method of manufacturing the same, wherein the surface of the semiconductor ceramic is modified so as not to let plating grow on it. SOLUTION: Boron is contained on the surface of a BaTiO3 chip semiconductor ceramic 2 in which a B-Ba-O insulating glass and an excess-Ti Ba-Ti-O insulator are provided. A boron-containing material is attached around a BaTiO3 semiconductor ceramic element, and then the semiconductor ceramic element coated with the boron-containing material is baked or thermally treated for the formation of a semiconductor chip ceramic. |
