| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can reduce the dependency on voltage of a capacitor without adding a complicated process. SOLUTION: This is a method of manufacturing a semiconductor device, comprising (a) forming the gate electrode 105 and 106 of Tr and the lower electrode 107 of a capacitor by forming the first polycrystalline silicon film on a semiconductor substrate 10 and patterning the first polycrystalline silicon film, (b) forming impurities-diffused layers 111 and 112 in the semiconductor substrate 101, (c) forming an insulating film 114 containing impurities and the second polycrystalline silicon film 115 to serve as an upper electrode 116 on the lower electrode 107, and (d) forming the capacitor consisting of a MIS structure of Tr, a lower electrode, a capacitor insulating film, and an upper electrode on the same semiconductor substrate by heat-treating the obtained semiconductor substrate 101 thereby diffusing impurities from the insulating film 114 into the lower electrode 107 and the second polycrystalline silicon film 115.
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