| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide film forming equipment which can simultaneously achieve the uniformization of a film formed on a substrate having a large area and an increase in film forming speed by suppressing the temperature rise of the substrate caused by a heated catalyst. SOLUTION: A thin film is formed on a partial surface of the substrate 8 by only supplying a gas containing a chemical species produced by bringing a gaseous starting material into contact with a catalyst 6 to the partial surface of the substrate 8 through a gas supplying pipe 3. The gas supplied to the partial surface of the substrate 8 is quickly discharged from the surface of the substrate 8 through a pair of gas discharging pipes 4 laid closely to the pipe 3. Consequently, the conductance of the gas flow can be increased and, accordingly, the gas can be supplied to the surface of the substrate 8 at a large flow rate. Since the substrate 8 is horizontally moved relatively to the pipes 3 and 4 by means of a moving means 10, a uniform thin film is formed on the whole surface of the substrate 8.</p> |
