| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method by which a Zn diffusion type window structure semiconductor laser with an excellent characteristic can easily be manufactured with high yield without the need for complicated process. SOLUTION: A Zn diffusion type window structure semiconductor laser is manufactured by a method including a process where a double hetero structure including an active layer and a contact layer is formed on a semiconductor substrate, a process where only a part of the contact layer equivalent to an optical emission end face is removed, a process where a ZnO film ad a dielectric film that are pattered in a stripe shape are formed on the contact layer, a process where a ridge waveguide path formed by using the patterned ZnO film and dielectric film for mask, a process where an electric current block layer is selectively grown by using the patterned ZnO film and dielectric film for a selective growing mask and Zn is diffused to manufacture a window structure, and a process where the dielectric film is patterned on an end face window to form and end face current non-injection section. The Zn diffusion type window structure semiconductor laser is manufactured by two times of crystal growth processes.
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