| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory capable of lowering the threshold voltage of a transfer gate MOS transistor and improving a TDDB service life. SOLUTION: In a DRAM provided with a memory cell array provided with bit pair lines BL and /BL, word lines WL and memory cells MC arrayed at the intersection parts, a decoder 3 for selecting the word line, a word line driving circuit 2 for supplying an 'H' level potential to a selected word line and supplying an 'L' level potential to unselected word lines and a bit line sense amplifier 1 connected to the bit line for amplifying a signal voltage read from the memory cell, a bit line 'L' level potential generation circuit 4 connected to the bit line on the side of an 'L' level through the bit line sense amplifier 1 for which an output terminal N1 is activated for generating the 'L' level potential higher than the 'L' level potential of the word line is provided.
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