| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for erasing information stored in a flash memory element by which erasing operations can be performed in a byte unit by performing erasure by using a hot hole injecting method. SOLUTION: In a method for erasing information stored in a flash memory element, erasure is performed, in a state in which a ground potential is applied to a source and first voltage Vd is applied to a drain, by a hot hole injecting method in which bias voltage Vg is applied to a gate stepwise from high voltage to low voltage. In this erasure, the bias voltage of the floating gate of a flash memory element is set so that second voltage or third voltage being an injecting condition of a hot hole is kept, and gate bias voltage is desirably controlled in accordance with a coupling ratio.</p> |
